MIL-PRF-19500/548H
4.3 Screening (JANS, JANTX, and JANTXV levels only). Screening shall be in accordance with table E-IV of
MIL-PRF-19500, and as specified herein. The following measurements shall be made in accordance with table I
herein. Devices that exceed the limits of table I herein shall not be acceptable.
Screen
Measurement
(see table E-IV of
JANS level
JANTX and JANTXV level
MIL-PRF-19500)
3a
See 4.3.1
See 4.3.1
3b and 3c
Not applicable
Not applicable
IC(OFF)1 and hFE; 100 percent read and
IC(OFF)1 and hFE; 100 percent read and
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record
record
10
See 4.3.2
See 4.3.2
IR, IC(OFF)1, hFE, and IC(ON)2;
IR, IC(OFF)1, hFE, and IC(ON)2;
ĆIC(OFF)1 = 100 percent of initial value
ĆIC(OFF)1 = 100 percent of initial value
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or 25 nA dc (whichever is greater).
or 25 nA dc ( whichever is greater).
ĆhFE ≤ ±20 percent of initial reading
ĆhFE ≤ ±20 percent of initial reading
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See 4.3.3
See 4.3.3
Subgroups 2 and 3 of table I herein;
Subgroup 2 of table I herein;
ĆIC(OFF)1 = ±100 percent of initial value
ĆIC(OFF)1 = ±100 percent of initial value
or 25 nA dc, (whichever is greater).
or 25 nA dc (whichever is greater).
ĆhFE = ±20 percent of initial reading;
ĆhFE = ±20 percent of initial reading;
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ĆIC(ON)2 = ±25 percent of initial reading;
ĆIC(ON)2 = ±25 percent of initial reading
ĆIR = ±100 percent of initial value or
ĆIR = ±100 percent of initial value or
25 µA dc, (whichever is greater)
25 µA dc, ( whichever is greater)
4.3.1 Temperature cycling. All devices shall be subjected to temperature cycling in accordance with method 1051
of MIL-STD-750, test condition B, except T(min) = -55°C; 10 cycles, 15 minutes minimum dwell.
4.3.1.1 Monitored temperature cycling. One cycle of monitored temperature cycling shall be performed on 100
percent of the devices. This test shall be performed any time after the completion of the thermal shock test specified
or it may be the last of the ten thermal cycles. The monitored temperature cycle is exempt from the ramp rate and
time to temperature requirements in Method 1051 of MIL-STD-750 to allow for the increased thermal mass of the
support circuitry. All junctions shall be monitored for electrical continuity. Any discontinuity shall be cause for
rejection of the device(s) under test. If 10 percent or more of the number of devices subjected to monitored
temperature cycling fail, the entire lot shall be rejected as any JAN quality level.
4.3.2 High temperature reverse bias (HTRB). All devices shall be subjected to high temperature reverse bias in
accordance with method 1039 of MIL-STD-750, test condition A, TA = +125°C, IF = 0, VCB = 36 V dc for 48 hours
minimum.
4.3.3 Power burn-in conditions. Power burn-in conditions are as follows: See figure 4 for burn-in circuit.
VCC = 20 V dc, VCE = 10 ±5 V dc, IF = 40 mA dc, PT = 275 ±25 mW at TA = +25°C ±3°C. No heat sink or forced air
cooling directly on the devices shall be permitted.
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