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MIL-PRF-19500-548 Coupler, Opto Electronic, Semiconductor Device, Solid State, Types 4N47, 4N48, 4N49, 4N47A, 4N48A, 4N49A, 4N47U, 4N48U, 4N49U, 4N47Bu, 4N48Bu, And 4N49Bu, Jan, Jantx, Jantxv, And JansThis specification covers the performance requirements for solid state optically coupled isolators in which a gallium aluminum arsenide diode light source is optically coupled to a silicon NPN phototransistor. Four levels of product assurance are provided for each type as specified in MIL-PRF-19500.

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MIL-PRF-19500/548H
* TABLE I. Group A inspection.
MIL-STD-750
Limit
Symbol
Unit
Inspection 1/
Method
Conditions
Min
Max
Subgroup 1
Visual and mechanical
2071
inspection
Subgroup 2 2/
LED characteristics:
VR = 2 V dc (see 4.5.3)
IR
4016
100
Reverse current leakage
µA dc
IF = 10 mA dc (see 4.5.3)
VF1
Forward voltage
4011
0.8
1.5
V dc
Transistor characteristics:
Collector to emitter
3011
breakdown voltage
IC = 1 mA dc, IB = 0,
V(BR)CEO
4N47, 4N47A, 4N47U
40
V dc
4N48, 4N48A, 4N48U
IF = 0 (see 4.5.4)
4N49, 4N49A, 4N49U
4N47BU, 4N48BU,4N49BU
60
V dc
Collector to base
3001
breakdown voltage
V(BR)CBO
4N47, 4N47A, 4N47U
45
V dc
IC = 100 µA dc, IF = 0,
4N48, 4N48A, 4N48U
IE = 0 (see 4.5.4)
4N49, 4N49A, 4N49U
4N47BU, 4N48BU,4N49BU
60
V dc
V(BR)EBO
Emitter to base breakdown
3026
7
V dc
IE = 100 µA dc, IC = 0,
voltage
IF = 0 (see 4.5.4)
VCE = 20 V dc, IB = 0,
IC(OFF)1
Off-state collector current
3041
100
nA dc
phototransistor mode:
IF = 0, condition D
(see 4.5.4)
VCE = 5 V; IC = 10 mA dc,
hFE
DC current gain
3076
100
IF = 0 (see 4.5.4)
See footnotes at end of table.
12



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