MIL-PRF-19500-486 Coupler, Opto Electronic, Semiconductor Device, Solid State, Types 4N22, 4N22A, 4N23, 4N23A, 4N24, 4N24A, 4N22U, 4N23U, And 4N24U, Jan, Jantx, Jantxv, And JansThis specification covers the performance requirements for solid state optically coupled isolators in which a gallium aluminum arsenide diode light source is optically coupled to a silicon NPN phototransistor. Four levels of product assurance are provided for each type as specified in MIL-PRF-19500.

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MIL-PRF-19500/486H

4.5.2 High temperature isolation voltage lot verification. This test shall be performed by shorting both the anode

and cathode terminals of the LED (light emitting diode) and shorting together the collector, emitter, and base

terminals of the transistor. The sample shall be split into two approximately equal groups and the specified VISO

applied between the LED terminals (positive) and transistor terminals (negative) of one group. The specified isolation

voltage shall be repeated with the LED terminals (negative) and the transistor terminal (positive) for the remaining

group. All voltages shall be applied at the specified ambient temperature.

4.5.3 Input LED tests. These tests shall be performed with the output transistor terminals open.

4.5.4 Output transistor tests. These tests shall be performed with the input LED terminals open.

4.5.5 Isolation and coupling capacitance tests. These tests shall be performed in both polarities between both

input terminals 5 and 7 shorted together and the output terminals 1, 2, and 3 shorted together (see figure 1) or input

terminals 1 and 6 shorted together and output terminals 3, 4, and 5 shorted together (see figure 2).

* 4.5.6 On-state collector current, phototransistor mode. These tests shall be performed with the base open in the

circuit, with the active area of the phototransistor tied to the base and the LED biased on to emit light, to provide bias

to the base.

4.6 Internal visual (pre-cap) inspection (JANTXV and JANS only). Internal visual inspection shall be performed in

accordance with methods 2072 and 2073 of MIL-STD-750, and as specified herein. Method 2072 shall be used for

inspecting transistor die and completed assembly. Method 2073 shall be used for inspecting light emitting diode.

4.6.1 Gallium arsenide or gallium aluminum arsenide light emitting diode die inspection. The die shall be

inspected under 100X magnification.

4.6.2 Silicon phototransistor visual inspection. The die shall be inspected under 100X magnification.